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TIP112 Field Effect Transistor , High Frequency Transistor

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TIP112 Field Effect Transistor , High Frequency Transistor

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : TIP112

Product ID : TIP112

Feature : Low Collector Emitter Saturation Voltage

Collector Power Dissipation : 2w

Junction Temperature : 150℃

Collector-Base Voltage : 100v

Emitter-Base Voltage : 5v

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TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN)

FEATURE
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 to +150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 100 V
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0(SUS) 100 V
Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5 V
Collector cut-off current ICEO VCE=50V,IB=0 2 mA
Collector cut-off current ICBO VCB=100V,IE=0 1 mA
Emitter cut-off current IEBO VEB=5V,IC=0 2 mA

DC current gain

 hFE(1) VCE=4V,IC=1A 1000 12000
hFE(2) VCE=4V,IC=2A 500
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA 2.5 V
Base-emitter voltage VBE VCE=4V,IC=2A 2.8 V
Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 100 pF

TO-220-3L Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

TIP112 Field Effect Transistor , High Frequency Transistor



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